An IGBT-based plasma power supply employs Insulated-Gate Bipolar Transistors (IGBTs) as switching devices within a high-frequency inverter circuit to deliver and regulate the power required for plasma generation.
These power supplies are highly valued for their:
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Superior Energy Efficiency – Minimizes power loss during plasma operation.
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High Power Handling – Capable of supporting demanding plasma processes.
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Precision Control – Enables accurate adjustment of plasma discharge parameters for consistent performance.
Technical Specifications
Parameter | Specification |
Mains Input | 415V (±10V), 3 Phase, 50Hz |
Maximum DC Output | 150V, 10A to 400A (variable) |
DC Output O.C.V | 300V |
Efficiency | Equal or better than 80% |
Power Factor | ≥0.9 at full load |
Ripple Factor | ≤1% of open circuit voltage |
Type of Source | Constant current source |
Mode of Power Supply | Switching mode power supply |
Switching Component | IGBT-based full bridge topology |
Advantages
High Efficiency for reduced energy consumption
Fast Switching Speeds for rapid response
Robust Performance under demanding conditions
Precise Power Control for process consistency
Superior Power Quality for reliable plasma generation
Applications
Thermal Plasma Torches
Waste Treatment and Recycling
Advanced Material Processing
Aerospace Propulsion Systems
Research and Development Laboratories